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Computational Electronics: Semiconductor Transport and Device Simulation [Hardcover]

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  • Category: Books (Technology & Engineering)
  • ISBN-10:  0792390881
  • ISBN-10:  0792390881
  • ISBN-13:  9780792390886
  • ISBN-13:  9780792390886
  • Publisher:  Springer
  • Publisher:  Springer
  • Pages:  268
  • Pages:  268
  • Binding:  Hardcover
  • Binding:  Hardcover
  • Pub Date:  01-Feb-1990
  • Pub Date:  01-Feb-1990
  • SKU:  0792390881-11-SPRI
  • SKU:  0792390881-11-SPRI
  • Item ID: 100743620
  • List Price: $169.99
  • Seller: ShopSpell
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  • Delivery by: Oct 13 to Oct 15
  • Notes: Brand New Item. Not shipped to AK, HI, APO, FPO, AE.
Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis? cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci? ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc? cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.Device Simulation for Silicon ULSI.- Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models.- Drift-Diffusion Systems: Analysis of Discretized Models.- Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods.- Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices.- Adaptive Grids for Semiconductor Modelling.- A Numerical Large Signal Model for the Heterojunction Bipolar Transistor.- The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot.- A New Technique for Includl#¯
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