Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 811, 1980 [Paperback]

The Kyoto Summer Institute 1980 (KSI '80), devoted to Fundamental Physics of Amorphous Semiconductors , was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on Particle Physics and Accelerator Projects and in September 1979 on Physics of Low-Dimensional Systems . The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon? ductor group in Japan. A few years ago, we started to organize an interna? tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on Physics of Semiconductors held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.What are Non-Crystalline Semiconductors.- Defects in Covalent Amorphous Semiconductors.- Surface Effects and Transport Properties in Thin Films of Hydrogenated Silicon.- The Past, Present and Future of Amorphous Silicon.- Doping and the Density of States of Amorphous Silicon.- The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon.- New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs.- Chemical Bonding of Alloy Atoms in Amorphous Silicon.- Photo-Induced Phenomena in Amorphous Semiconductors.- Theory of Electronic Properties of Amorphous Semiconductors.- Some Problems of the Electron Theory of Disordered Semiconductors.- The AnlSø