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Modeling Bipolar Power Semiconductor Devices [Paperback]

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  • Category: Books (Technology & Engineering)
  • Author:  Gachovska, Tanya K., Hudgins, Jerry L., Santi, Enrico, Bryant, Angus
  • Author:  Gachovska, Tanya K., Hudgins, Jerry L., Santi, Enrico, Bryant, Angus
  • ISBN-10:  3031013700
  • ISBN-10:  3031013700
  • ISBN-13:  9783031013706
  • ISBN-13:  9783031013706
  • Publisher:  Springer
  • Publisher:  Springer
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Jun-2013
  • Pub Date:  01-Jun-2013
  • SKU:  3031013700-11-SPRI
  • SKU:  3031013700-11-SPRI
  • Pages:  88
  • Pages:  88
  • Item ID: 104826840
  • List Price: $29.99
  • Seller: ShopSpell
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  • Delivery by: Oct 13 to Oct 15
  • Notes: Brand New Item. Not shipped to AK, HI, APO, FPO, AE.
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.Introduction to Power Semiconductor Device Modeling.- Physics of Power Semiconductor Devices.- Modeling of a Power Diode and IGBT.- IGBT Under an Inductive Load-Switching Condition in Simulink.- Parameter Extraction.Tanya Kirilova Gachovska received a M.Eng. degree in electrical engineering specializing in Automation of Production and a Ph.D. in electrical engineering specializing in Pulsed Electric Fields(PEF) from the University of Ruse, Bulgaria, in 1995 and 2003, respectively. She worked as an assistant professor from 1999-2003 at the University of Ruse. She conducted research for two years and taught for a semester at McGill University in Montreal, Canada. She had an 18 months post-doc experience on PEF at the University of Nebraska Lincoln, USA. Tanya finished her second Ph.D. in electrical engineering specializing in Power Electronics specifically Modeling of Power Semiconductor Devices in 2012. During her studies, she has taught different courses and labs and continued a collaboration for PEF research with the University of Ruse, McGill, UNL, and two Algerians universities. She is currently at Solantro Semiconductor Inc. She is the author or co-author of more than 30 technical papers and conference presentations, and holds a world patent in PEF. Professor Hudgins lCW
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