Amorphous and Crystalline Silicon Carbide IV: Proceedings of the 4th International Conference, Santa Clara, CA, October 911, 1991 [Paperback]

Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods, characterization, andmodels explaining experimental findings. The volume alsocontains the latest results in the exciting field of SiGe/Siheterojunction bipolar transistors.The reader will find this book valuable as a referencesource, an up-to-date and in-depth overview of this field,and, most importantly, as a window into the immense range ofreading potential applications of silicon carbide. It isessential for scientists, engineers and students interestedin electronic materials, high-speed heterojunction devices,and high-temperature optoelectronics.I Growth of Crystalline Silicon Carbide.- Recent Progress in Epitaxial Growth of SiC.- Si1-yCy Alloys  Extending Si-Based Heterostructure Engineering.- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers.- Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method.- Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply.- Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD.- Effects of CH3Cl Gas on Heteroepitaxial Growth of (?-SiC on Si(111) by Chemical Vapor Deposition.- Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates.- Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition.- Growth and Characterization of ?-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy.- Atomic Layer Control of ?-SiC(001) Surface.- Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method.- LiqulsT