Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK [Hardcover]

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Spin-Related Phenomena.- Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well.- Photogalvanic Effects in HgTe Quantum Wells.- Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers.- Control and Probe of Carrier and Spin Relaxations in InSb Based Structures.- Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells.- Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures.- Temperature Dependence of the Electron Lande g-Factor in InSb.- Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAls&