Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.
I Concepts.- 1 The History of Heterostructure Lasers.- 1.1 Introduction.- 1.2 The DHS Concept and Its Application for Semiconductor Lasers.- 1.3 Quantum Dot Heterostructure Lasers.- 1.4 Future Trends.- References.- 2 Stress-Engineered Quantum Dots: Natures Way.- 2.1 Introduction.- 2.2 Corrugated Surface Stress and Lattice-Matched Growth: Surface Mechano-Chemistry.- 2.3 Lattice-Mismatch Stress and Growth Front Morphology Evolution.- 2.4 Island Induced Stress Evolution in Capping Layers.- 2.5 Stress-Driven Vertically Self-Organized Growth.- 2.6 Stress-Directed Spatially Selective Quantum Dot Arrays.- 2.7 Conclusion.- References.- II Physics.- 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy.- 3.1 Introduction.- 3.2 TEM Investigations of Quantum Dots.- 3.3 Structure Investigations of Quantum Dots.- 3.4 Conclusion and Outlook.- References.- 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001).- 4.1 Introduction.- 4.2 Experimental Technique.- 4.3 InAs Growth on GaAs(001) by MBE.- 4.4 Post-Growth Annealing Effect on InAs Nanostructures.- 4.5 Summary.- References.- 5 Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots.- 5.1 Introduction.- 5.2 Contrast Mechanisms in XSTM Experiments.- 5.3 Methods.- 5.4 Results.- 5.5 Discussion.- 5.6 Summary and Outlook.- References.- 6 X-ray Characterization of Group III-Nitrides (Al,In,Ga)N.- 6.1 Introduction.- 6.2 Crystal Structure and Mosaicity.- 6.3 High-Resolution X-ray Diffraction.- 6.4 Biaxial Strain-Stress Relationship.- 6.5 Experimental Results.- 6.6 Conclusions.- References.- 7 Theory of the Electronic and Optical PropertilC