Radiation Effects in Advanced Semiconductor Materials and Devices [Paperback]

In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.Radiation Environments and Component Selection Strategy.- Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices.- Displacement Damage in Group IV Semiconductor Materials.- Radiation Damage in GaAs.- Space Radiation Aspects of Silicon Bipolar Technologies.- Radiation Damage in Silicon MOS Devices.- GaAs Based Field Effect Transistors for Radiation-Hard Applications.- Opto-Electronic Components for Space.- Advanced Semiconductor Materials and Devices - Outlook.In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and lƒ´