Wide Bandgap Semiconductor Spintronics [Hardcover]

1. GaN Band Structure 2. Rashba Hamiltonian 3. Rashba Spin-splitting in III-Nitride Heterostructures and Quantum Wells 4. Tunnel Spin Filter in Rashba Quantum Structure 5. Exchange Interaction in Semiconductors and Metals 6. Ferromagnetism in IIIV Semiconductors 7. Topological Insulators 8. Magnetic Exchange Interaction in Topological Insulator 9. Quantum Anomalous Semimetals 10. Quantum Anomalous Hall Effect in Wurtzite Quantum Wells

This second edition of the book presents spintronic properties of IIIV nitride semiconductors. The book explores and actively discusses semiconductor spintronics and proposes various device implementations along the way.

This second edition of the book presents spintronic properties of IIIV nitride semiconductors. As wide bandgap III-nitride nanostructures are relatively new materials, the book pays particular attention to the difference between zinc-blende GaAs- and wurtzite GaN-based structures where the Rashba spinorbit interaction plays a crucial role in voltage-controlled spin engineering. It also deals with topological insulators and discusses electrically driven zero-magnetic-field spin-splitting of surface electrons with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. It describes the recently identified zero-gap statean anomalous quantum semimetal. The book comprises calculation of topological indexes in semiconductor and semimetal phases. It compares results that follow from the low-energy model and the BernevigHugesZhang model, which accounts for the full-Brillouin-zone electron spectrum. It also discusses the fractional quantization of Hall conductance and performs the direct calculation of Chern numbers for the inverted GaN/InN quantum well, determining topological properties by Chern number C |=2.

The book explores and actively discusses semiconductor spintronics and proposes varil£h