ShopSpell

Arbitrary Modeling of TSVs for 3D Integrated Circuits [Hardcover]

$78.99     $109.99    28% Off      (Free Shipping)
100 available
  • Category: Books (Technology & Engineering)
  • Author:  Salah, Khaled, Ismail, Yehea, El-Rouby, Alaa
  • Author:  Salah, Khaled, Ismail, Yehea, El-Rouby, Alaa
  • ISBN-10:  3319076108
  • ISBN-10:  3319076108
  • ISBN-13:  9783319076102
  • ISBN-13:  9783319076102
  • Publisher:  Springer
  • Publisher:  Springer
  • Binding:  Hardcover
  • Binding:  Hardcover
  • Pub Date:  01-Feb-2014
  • Pub Date:  01-Feb-2014
  • SKU:  3319076108-11-SPRI
  • SKU:  3319076108-11-SPRI
  • Item ID: 100160473
  • List Price: $109.99
  • Seller: ShopSpell
  • Ships in: 5 business days
  • Transit time: Up to 5 business days
  • Delivery by: Jul 04 to Jul 06
  • Notes: Brand New Book. Order Now.
This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor?and inductive-based communication system and bandpass filtering.

Introduction: Work around Moores Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. ?Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, ?and inductive-based communication system, and bandpass filtering.

?Introduces a robust model that captures accurately all the loss modes of a TSV,? coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region;

?Enables readers to use a model which is technollóä

Add Review