Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field.? Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.
This book offers comprehensive coverage of novel bismuth-related materials and devices. It provides a foundation for the development of future optoelectronic, thermoelectric, and electronic devices.
Preface
Chapter 1: Dilute Bismides for Mid-IR Applications
Chapter 2: Bismide-based photonic devices for near- and mid-infrared applications
Chapter 3: Theory of the electronic structure of dilute bismide alloys: Tight-binding and k_p models
Chapter 4: Dilute bismuthides on an InP platform
Chapter 5: Atmospheric-pressure metalorganic vapor phase epitaxy of GaAsBi alloy on GaAs substrate
Chapter 6: Group III-V bismide materials grown by liquid phase epitaxy
Chapter 7: Spectroscopic Ellipsometry of AP-MOVPE grown GaAs