Heterostructure Epitaxy and Devices [Paperback]

Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 15-19, 1995Section I: Epitaxial Growth. Simulation of III-V Layer Growth; Y. Arima, T. Irisawa. Real Time Monitoring of Epitaxial Growth; W. Richter, et al. Influence of Carrier Gas on AlAs, GaAs and InP MOCVD Growth; S. Hasen?hrl, et al. LP-MOVPE of III-V Semiconductors Using Highly Pure N2 as the Carrier Gas.; H. Hardtdegen, et al. Dependence of Properties of LP MOCVD InGaP Layers on Growth Conditions; R. J?dela, et al. Growth of GaN MOCVD Layers on GaN Single Crystals; K. Pakula, et al. Electrical and Optical Properties of Te-Doped GaSb Grown by MOVPE; K. Hjelt, T. Tuomi. Computer Simulations of Epitaxial Growth, Surface Kinetic Processes and RHEED Intensity Oscillations; D. Papajov?, et al. Growth and Characterization of InP/Ga0.47 In0.53 As Deposited by MOMBE; M. v.d. Ahe, et al. Investigation of the Effect of GaAs Buffer Layers Grown by MBE at Different Temperatures on the Performance of GaAs MESFETs; M. Lagadas, et al. Multilayered GaAs VPE Structures for Micro Machining; K. Somogyi, et al. Growth of InP and GaInAsP Layers by Liquid-Phase Epitaxy Using Holmium Gettering and Doping; O. Proch?zkov?, et al. Meander Type LPE and High Temperature Stability of Elastically Strained GaInAsP/InP Layers; D. Nohavica, et al. Section II: Heterostructures. Scanning Tunneling Microscopy Characterization of Heterostructures; E.R. Weber, et al. Microscopic Origin of Femtosecond Spectral Hole Burning in Quantum Wells; A. Moskov?, M. Mosko. Carrier Capture Due to Carrier-Carrier Interaction in Quantum Wells; K. K?lna, M. Mosko. Optical and Theoretical Study of GaAs Quantum Wells Embedded in GaAs/AlAs Superlattices; V. Donchev, et al. MOCVD Growth and Characterization of InAs/GaAsSuperlattices; M. Černiansky, et al. Electrical Characteristics of Epitaxial Al/AlxGa1-x As/n- Al0.25 Ga0.75 As Heterostructures; Zs.J. Horváth, L. Dozsa. Investl“+