Atomic Layer Deposition for Semiconductors [Paperback]

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.I.IntroductionChapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)II.FundamentalsChapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)Chapter 3 . ALD simulations; Simon Elliott (Tyndall)III.ALD for memory devicesChapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,Seong Keun Kim, and Sang Woon Lee (SNU)III-2. ALD for emerging memoriesChapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)IV.ALD for logic devicesChapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong HwangChapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei andYoungnam University)V.ALD machinesChapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu

?Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthl“+