Electronic States and Optical Transitions in Semiconductor Heterostructures [Hardcover]

The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.The study of semiconductor heterostructures started more than forty years ago. In the 1980s this area of research moved to the forefront of semiconduc? tor physics, largely due to progress in growth technologies which are now capable of producing ultrathin layers (up to a few monolayers) of different semiconductor materials. The availability of structures with nearly ideal, well-controlled properties has made semiconductor heterostructures a test? ing ground for solid-state physics. These structures have had a profound impact on basic research in semiconductor physics by opening new possibil? ities for studying low-dimensional electrons, as well as the atomic and elec? tronic properties of interfaces. Semiconductor heterostructures have also a variety of important practical applications: they provide a material basis for a number of novel devices, and also open the way for improving the operating characteristics l#$