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Fundamentals of Power Semiconductor Devices [Paperback]

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  • Category: Books (Technology & Engineering)
  • Author:  Baliga, B. Jayant
  • Author:  Baliga, B. Jayant
  • ISBN-10:  1489977651
  • ISBN-10:  1489977651
  • ISBN-13:  9781489977656
  • ISBN-13:  9781489977656
  • Publisher:  Springer
  • Publisher:  Springer
  • Pages:  1096
  • Pages:  1096
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Feb-2016
  • Pub Date:  01-Feb-2016
  • SKU:  1489977651-11-SPRI
  • SKU:  1489977651-11-SPRI
  • Item ID: 100784459
  • List Price: $219.99
  • Seller: ShopSpell
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  • Delivery by: Jul 09 to Jul 11
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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.  The treatment focuses on silicon devices and includes the  unique attributes and design requirements for emerging silicon carbide devices.

Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Drawing upon years of practical expelĂ!

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