Ionizing Radiation Effects in MOS Devices and Circuits [Hardcover]

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.Historical Perspective (H. Hughes).

Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.).

Radiation-Induced Interface Traps (P. Winokur).

Radiation Effects on MOS Devices and Circuits (P.Dressendorfer).

Radiation-Hardening Technology (P. Dressendorfer).

Process-Induced Radiation Effects (T. Ma).

Source Considerations and Testing Techniques (K. Kerris).

Transient-Ionization and Single-Event Phenomena (S. Kerns).

Index.

T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.