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MOSFET Theory and Design [Paperback]

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  • Category: Books (Technology & Engineering)
  • Author:  Warner, R. M., Grung, B. L.
  • Author:  Warner, R. M., Grung, B. L.
  • ISBN-10:  0195116429
  • ISBN-10:  0195116429
  • ISBN-13:  9780195116427
  • ISBN-13:  9780195116427
  • Publisher:  Oxford University Press
  • Publisher:  Oxford University Press
  • Pages:  272
  • Pages:  272
  • Binding:  Paperback
  • Binding:  Paperback
  • Pub Date:  01-Jul-1999
  • Pub Date:  01-Jul-1999
  • SKU:  0195116429-11-MPOD
  • SKU:  0195116429-11-MPOD
  • Item ID: 100823545
  • Seller: ShopSpell
  • Ships in: 2 business days
  • Transit time: Up to 5 business days
  • Delivery by: Jan 18 to Jan 20
  • Notes: Brand New Book. Order Now.
Developed for a one-semester course at the junior, senior, or graduate level,MOSFET Theory and Designpresents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models.
MOSFET Theory and Designoffers a hands on approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.

Preface
Charts
Physical Constants
Properties of Silicon
1. Basic MOSFET Theory
1.1. Field-Effect Transistors
1.2. MOSFET Definitions
1.3. Rudimentary Analysis
1.4. Current-Voltage Equations
1.5. Universal Transfer Characteristics
1.6. Transconductance
1.7. Inverter Options
2. MOS-Capacitor Phenomena
2.1. Oxide-Silicon Boundary Conditions
2.2. Approximate Field and Potential Profiles
2.3. Accurate Band Diagram
2.4. Barrier-Height Difference
2.5. Interfacial Charge
2.6. Oxide Charge
2.7. Calculating Threshold Voltage
3. MOSlsó