Semiconductor Power Devices Physics, Characteristics, Reliability [Hardcover]

Halbleiter-Leistungsbauelemente sind das Kernst?ck der Leistungselektronik. Sie bestimmen die Leistungsf?higkeit und machen neuartige und verlustarme Schaltungen erst m?glich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie ?ber einzelne Bauelemente bis zu thermomechanischen Problemen, Zerst?rungsmechanismen und St?rungseffekten. Die 2., ?berarbeitete Auflage ber?cksichtigt technische Neuerungen und Entwicklungen.

Power Semiconductor Devices  Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn-Junctions.- Short Introduction to Power Device Technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device-Induced Oscillations and Electromagnetic Disturbances.- Power Electronic System Integration.

Josef Lutz studied Physics at the University of Stuttgart. He invented the Controlled Axial Lifetime (CAL) diode and holds several patents. In 1999 he graduated as Ph.D in electrical engineering at the University of Ilmenau. Since August 2001 he is a Professor for Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany. He is the consulting Director of the PCIM, member of four international Program Committees and member of the Editorial Advisory Board of Microelectronics Reliability. He was awarded with the degree of Honorable Professor by the North Caucasus State University Stavropol, Russia, in 2005. 

Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of M?nster. In 1966 he joined thlÓQ