Materials Fundamentals of Gate Dielectrics [Hardcover]

Preface.1: Materials and Physical Properties of High-K Oxide Films; Ran Liu.2: Device Principles of High-K Dielectrics; Kurt Eisenbeiser.3: Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Alexandra Navrotsky and Sergey V. Ushakov.4: Electronic Structure and Chemical Bonding in High-K Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces; Gerald Lucovsky.5: Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; J. Robertson and P.W. Peacock.6: Dielectric Properties of Simple and Complex Oxides from First-Principles; U.V. Waghmare and K.M. Rabe.7: IVb Transition Metal Oxides and Silicates: An Ab Initio Study; Gian-Marco Rignanese.8: The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors; Rodney Mckee.9: Interfacial Properties of Epitaxial Oxide/Semiconductor Systems; Y. Liang and A.A. Demkov.10: Functional Structures; Matt Copel.11: Mechanistic Studies of Dielectric Growth on Silicon; Martin M. Frank and Yves J. Chabal.12: Methodology for Development of High-k Stacked Gate Dielectrics on IIIV Semiconductors; Matthias Passlack.Index

Alexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. He has organized several national and international meetings, serves as an associate editor ofg the Journal of Vacuum Science and Technology, and is a member of the ITRS working group on Emerging Research Materials. He is adjunct professor of Physics at Arizona State University.

 

Alexandra Navrotsky was educated at the BlS%