Non-volatile Memories [Hardcover]

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

ACKNOWLEDGEMENTS xi

PREFACE xiii

PART 1. INFORMATION STORAGE AND THE STATE OF THE ART OF ELECTRONIC MEMORIES 1

CHAPTER 1. GENERAL ISSUES RELATED TO DATA STORAGE AND ANALYSIS CLASSIFICATION OF MEMORIES AND RELATED PERSPECTIVES 3

1.1. Issues arising from the flow of digital information 3

1.2. Current electronic memories and their classification 5

1.3. Memories of the future 8

CHAPTER 2. STATE OF THE ART OF DRAM, SRAM, FLASH, HDD AND MRAM ELECTRONIC MEMORIES 13

2.1. DRAM volatile memories 13

2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor) 14

2.1.2. Operating characteristics of DRAM memories 17

2.2. SRAM memories 19

2.3. Non-volatile memories related to CMOS technology 22

2.3.1. Operational characteristics of a floating gate MOSFET 22

2.3.2. Flash memories 38

2.4. Non-volatile magnetic memories (hard disk drives – HDDs and MRAMs) 45

2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives 46

2.4.2. Spin valves 49

2.4.3. Magnetic tunnel junctions 51&ll#º