Physical and Technical Problems of SOI Structures and Devices [Paperback]

In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.
Proceedings of the NATO Advanced Research Workshop, Gurzuf, Ukraine, November 1--4, 1994In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.
Preface. Contributors. SOI materials: Low dose SIMOX for ULSI applications; A.J. Auberton-Herv?, et al. Why porous silicon for SOI? V.P. Bondarenko, A.M. Dorofeev. Defect engineering in SOI films prepared by zone-melting recrystallization; E.I. Givargizov, et al. Ion beam processing for SOI; W. Skorupa. Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications; J.C. Sturm, et al. Direct formation of thin film nitride structures by high intensity ion implantation of nitrogen into silicon; R. Yankov, F. Komarov. Stimulated technology for implanted SOI formation; V.G. Litovchenko, et al. Behaviour of oxygen and nitrogen atoms sequentially implanted into silicon; A.B. Danilin. SOI l³n