Simulation of Semiconductor Processes and Devices 1998 SISPAD 98 [Paperback]

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include: semiconductor equipment simulation process modeling and simulation device modeling and simulation of complex structures interconnect modeling integrated systems for process, device, circuit simulation and optimisation numerical methods and algorithms compact modeling and parameter extraction modeling for RF applications simulation and modeling of new devices (heterojunction based, SETs, quantum effect devices, laser based ...)TCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFETs Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structures RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulatiol3*