This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 57, 2001, in Athens.The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.Macroscopic Quantum Carrier Transport Modeling.- Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication.- Monte Carlo Impurity Diffusion Simulation Considering Charged Species.- A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism.- The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization.- Atomistic Simulations of Extrinsic-Defects Evolution and Transient Enhanced Diffusion in Silicon.- Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach.- Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si-MOSFETs.- Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon.- An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects.- Density of States and Group Velocity Calculations for SiO2.- Investigation of Spurious Velocity Overshoot Using Monte Carlo Data.- Elasto-Plastic Modeling of Microelectronics MateriallÅ